Tvs diode arrays, Low capacitance esd protection - sp3031 series, Diodes) – Littelfuse SP3031 Series User Manual
Page 2: Sp3031
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© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/24/13
TVS Diode Arrays
(SPA
®
Diodes)
Low Capacitance ESD Protection - SP3031 Series
SP3031
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
I
PP
Peak Current (t
p
=8/20μs)
5.0
A
T
OP
Operating Temperature
–40 to 125
°C
T
STOR
Storage Temperature
–55 to 150
°C
Thermal Information
Parameter
Rating
Units
Storage Temperature Range
–55 to 150
°C
Maximum Junction Temperature
150
°C
Maximum Lead Temperature
(Soldering 20-40s)
260
°C
Electrical Characteristics
(T
OP
=25ºC)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Reverse Standoff Voltage
V
RWM
5.0
V
Reverse Breakdown Voltage
V
BR
1
R
=1mA
6.0
V
Reverse Leakage Current
I
LEAK
V
R
=5V with 1pin at GND
1
µA
Clamp Voltage
1
V
C
I
PP
=1A, t
p
=8/20µs, Fwd
6.9
V
I
PP
=2A, t
p
=8/20µs, Fwd
7.5
V
Dynamic Resistance
R
DYN
(V
C2
-V
C1
)/(I
PP2
-I
PP1
)
0.6
Ω
ESD Withstand Voltage
1
V
ESD
IEC61000-4-2 (Contact)
±10
kV
IEC61000-4-2 (Air)
±15
kV
Diode Capacitance
1
C
I/O-I/O
Reverse Bias=0V
0.8
pF
Note: 1. Parameter is guaranteed by design and/or device characterization.
Capacitance vs. Reverse Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
1.0
2.0
3.0
4.0
5.0
Ca
pa
ci
ta
nc
e
(pF)
DC Bias (V)
Insertion Loss (S21) I/O to GND
Pulse Waveform
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.0
5.0
10.0
15.0
20.0
25.0
30.0
Time (μs)
Pe
rcen
t of
I
PP
-5
Frequency (MHz)
-10
-15
-20
-25
0
-30
-35
10
100
1000
At
tenuation (dB
)
Transmission Line Pulsing(TLP) Plot
TLP Voltage (V)
TLP Cur
rent (A
)