Littelfuse SDP Biased Series 5x6 QFN - Manual (Page 2)

SIDACtor ® Protection Thyristors
31
Revised: 09/26/13
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Broadband Optimized ™ Protection
SDP Biased Series 5x6QFN
Series
I
PP
I
TSM
2x10µs 1.2x50µs/8x20µs 10x700/5x310µs 10x1000µs 600V
RMS
1 cycle
A min A min A min A min A
RMS
C 500 400 200 100 30
Surge Ratings
Parameter Name Test Conditions Value Units
I
TSM
Maximum non-reptitive
on-state current, 50/60Hz
0.5s 6.5
A
1s 4.6
2s 3.4
5s 2.3
30s 1.3
900s 0.73
50/60Hz Ratings
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+V -V
+I
-I
V
S
V-I: Characteristics Capacitance vs. Voltage*
0
5
10
15
20
25
30
35
40
0 0 1 0 1 1 1 . 0
Line Voltage (V)
Capacitance (pF)
0V 3.3V
5V 12V
24V 30V
50V
Bias Voltage
* Bias voltage must be lower than V
DRM
Notes:
- Peak pulse current rating (I
PP
) is repetitive and guaranteed for the life of the product.
- I
PP
ratings applicable over temperature range of -40ºC to +85ºC
- The device must initially be in thermal equilibrium with -40°C < T
J
< +150°C
Package Symbol Parameter Value Unit
5x6 QFN
T
J
Junction Temperature -40 to +150 °C
T
STG
Storage Temperature Range -40 to +150 °C
R
0JA
Thermal Resistance: Junction to Ambient 100 °C/W
Thermal Considerations