Littelfuse MG12300D-BN3MM Series - Manual (Page 2)

©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:08/06/13
Power Module
2
MG12300D-BN3MM
1200V IGBT Family
Symbol Parameters Test Conditions Min Typ Max Unit
IGBT
V
GE(th)
Gate - Emitter Threshold Voltage V
CE
=V
GE
, I
C
=12mA 4.5 5.5 6.5 V
V
CE(sat)
Collector - Emitter
Saturation Voltage
I
C
=300A, V
GE
=15V, T
Vj
=25°C 3.2 V
I
C
=300A, V
GE
=15V, T
Vj
=125°C 3.85 V
I
CES
Collector Leakage Current
V
CE
=1200V, V
GE
=0V, T
Vj
=25°C 2 mA
V
CE
=1200V, V
GE
=0V, T
Vj
=125°C 10 mA
I
GES
Gate Leakage Current V
CE
=0V,V
GE
=±15V, T
Vj
=125°C -400 400 μA
R
Gint
Intergrated Gate Resistor 1.3 Ω
Q
ge
Gate Charge V
CE
=600V, I
C
=300A , V
GE
=±15V 3.2 μC
C
ies
Input Capacitance
V
CE
=25V, V
GE
=0V, f =1MHz
22 nF
C
res
Reverse Transfer Capacitance 1.0 nF
t
d(on)
Turn - on Delay Time
V
CC
=600V
I
C
=300A
R
G
=3.3 Ω
V
GE
=±15V
Inductive Load
T
Vj
=25°C 110 ns
T
Vj
=125°C 120 ns
t
r
Rise Time
T
Vj
=25°C 70 ns
T
Vj
=125°C 80 ns
t
d(off)
Turn - off Delay Time
T
Vj
=25°C 550 ns
T
Vj
=125°C 600 ns
t
f
Fall Time
T
Vj
=25°C 50 ns
T
Vj
=125°C 60 ns
E
on
Turn - on Energy
T
Vj
=25°C 18 mJ
T
Vj
=125°C 29 mJ
E
off
Turn - off Energy
T
Vj
=25°C 14 mJ
T
Vj
=125°C 22 mJ
I
SC
Short Circuit Current
t
psc
≤10μS , V
GE
=15V
T
Vj
=125°C,V
CC
=900V
1200 A
R
thJC
Junction-to-Case Thermal
Resistance (Per IGBT)
0.085 K/W
Diode
V
F
Forward Voltage
I
F
=300A , V
GE
=0V, T
Vj
=25°C 2.0 V
I
F
=300A , V
GE
=0V, T
Vj
=125°C 2.05 V
I
RRM
Max. Reverse Recovery Current I
F
=300A , V
R
=-600V 300 A
t
rr
Reverse Recovery Time d
iF
/dt=6000A/μs 350 ns
E
rec
Reverse Recovery Energy T
Vj
=125°C 15.2 mJ
R
thJCD
Junction-to-Case Thermal
Resistance (Per Diode)
0.15 K/W
Electrical and Thermal Specifications (T
C
= 25°C, unless otherwise specified)