Littelfuse SP2502L Series - Manual (Page 2)

© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/24/13
TVS Diode Arrays
(SPA ® Diodes)
TVS Diode Arrays
(SPA ® Diodes)
Lightning Surge Protection - SP2502L Series
SP4040
Absolute Maximum Ratings
Parameter Rating Units
Peak Pulse Current (8/20µs) 75 A
Peak Pulse Power (8/20µs) 2100 W
IEC 61000-4-2, Direct Discharge, (Level 4) 30 kV
IEC 61000-4-2, Air Discharge, (Level 4) 30 kV
Telcordia GR 1089 (Intra-Building) (2/10µs) 100 A
ITU K.20 (5/310µs) 20 A
Electrical Characteristics (T
OP
= 25°C)
Thermal Information
Parameter Rating Units
SOIC Package 170 °C/W
Operating Temperature Range –40 to 125 °C
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering
20-40s) (SOIC - Lead Tips Only)
260 °C
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Stand-Off Voltage V
RWM
I
T
≤1µA - - 3.3 V
Reverse Breakdown Voltage V
BR
I
T
= 2µA 3.3 - - V
Snap Back Voltage V
SB
I
T
= 50mA 3.3 - - V
Reverse Leakage Current I
R
V
RWM
= 3.3V - - 1 µA
Clamping Voltage, Line-Ground 1 V
C
I
PP
= 40A, t
p
=8/20 µs - - 14 V
Clamping Voltage, Line-Ground 1 V
C
I
PP
= 75A, t
p
=8/20 µs - - 20 V
Clamping Voltage, Line-Ground 1 V
C
I
PP
= 100A, t
p
=2/10 µs 20 V
Dynamic Resistance, Line-Ground 1 R
DYN
( V
C2
-V
C1
)/(I
PP2
-I
PP1
) - 0.2 - W
Clamping Voltage, Line-Line 1 V
C
I
PP
= 40A, t
p
=8/20 µs - - 20 V
Clamping Voltage, Line-Line 1 V
C
I
PP
= 75A, t
p
=8/20 µs - - 30 V
Clamping Voltage, Line-Line 1 V
C
I
PP
= 100A, t
p
=2/10 µs 30 V
Dynamic Resistance, Line-Line 1 R
DYN
( V
C2
-V
C1
)/(I
PP2
-I
PP1
) - 0.3 - W
Junction Capacitance 1 C
j
Line to Ground
V
R
=0V, f= 1MHz
- 5 8 pF
Line to Line, V
R
=0V, f= 1MHz - 2.5 5 pF
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
1 Parameter is guaranteed by design and/or device characterization.