Littelfuse SP1004 Series - Manual (Page 2)

© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/10/13
TVS Diode Arrays
(SPA ® Diodes)
General Purpose ESD Protection - SP1004 Series
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
Peak Pulse Current (t
p
=8/20μs) 2.0 A
T
OP
Operating Temperature –40 to 125 °C
T
STOR
Storage Temperature –55 to 150 °C
Thermal Information
Parameter Rating Units
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering 20-40s) 260 °C
Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Voltage Drop 1 V
R
I
R
=1mA 6.0 9.5 V
Reverse Standoff Voltage 1 V
RWM
I
R
≤1µA 6.0 V
Reverse Leakage Current 1 I
LEAK
V
R
=5V 0.1 µA
Clamp Voltage 2 V
C
I
PP
=1A, t
p
=8/20µs 10 V
I
PP
=2A, t
p
=8/20µs 12 V
Dynamic Resistance R
DYN
(V
C2
- V
C1
) / (I
PP2
- I
PP1
) 2.0 Ω
ESD Withstand Voltage 1,2 V
ESD
IEC61000-4-2 (Contact Discharge) 3 ±8 kV
IEC61000-4-2 (Air Discharge) ±15 kV
Diode Capacitance 1,2 C
D
Reverse Bias=0V 6 7 pF
Reverse Bias=1.5V 5 6 pF
Note: 1 Parameter specified with pin 2 grounded externally.
2 Parameter is guaranteed by design and/or device characterization.
3 Capable of withstanding >1,000 pulses at 1s intervals.
Capacitance vs. Reverse Bias Insertion Loss (S21)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DC Bias (V)
Capacitance (pF)
-30
-25
-20
-15
-10
-5
0
5
0 0 0 0 1 0 0 0 1 0 0 1 0 1
Frequency (MHz)
Attenuation (dB)