Vishay GA200SA60UP - Manual (Page 4)

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4 Revision: 29-Apr-08
GA200SA60UP
Vishay High Power Products Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
Fig. 6 - Maximum Effektive Transient Thermal Impedance, Junction to Case
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
1 10 100
0
V
CE
- Collector to Emitter Voltage (V)
C - Capacitance (pF)
5000
10 000
15 000
20 000
25 000
30 000
V
GE
= 0 V, f = 1 MHz
C
ies
= C
ge
+ C
gc
, C
ce
shorted
C
res
= C
gc
C
oes
= C
ce
+ C
gc
C
ies
C
oes
C
res
0 200 400 600 800
0
4
8
12
16
20
Q
G
- Total Gate Charge (nC)
V
GE
- Gate to Emitter Voltage (V)
V
CC
= 400 V
I
C
= 110 A
0 10 20 30 40 50 60
R
G
- Gate Resistance ( Ω)
Total Switching Losses (mJ)
0
10
20
30
40
50
60
V
CC
= 480 V
V
GE
= 15 V
T
J
= 25 °C
I
C
= 200 A
Total Switching Losses (mJ)
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
1
10
100
T
J
- Junction Temperature (°C)
I
C
= 200 A
I
C
= 100 A
I
C
= 350 A
R
G
= 2.0 Ω
V
GE
= 15 V
V
CC
= 480 V