Vishay HFA25PB60 - Manual

Document Number: 93084 For technical questions, contact: [email protected] www.vishay.com
Revision: 30-Jul-08 1
HEXFRED ®
Ultrafast Soft Recovery Diode, 25 A
HFA25PB60
Vishay High Power Products
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
RRM
• Very low Q
rr
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA25PB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 25 A continuous current, the
HFA25PB60 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
® product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the
t
b
portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25PB60 is ideally suited
for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
PRODUCT SUMMARY
V
R
600 V
V
F
at 25 A at 25 °C 1.7 V
I
F(AV)
25 A
t
rr
(typical) 23 ns
T
J
(maximum) 150 °C
Q
rr
(typical) 112 nC
dI
(rec)M
/dt (typical) 250 A/µs
I
RRM
10 A
TO-247AC modified
Cathode
to base
1 3
Cathode Anode
4
2
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
600 V
Maximum continuous forward current I
F
T
C
= 100 °C 25
A Single pulse forward current I
FSM
225
Maximum repetitive forward current I
FRM
100
Maximum power dissipation P
D
T
C
= 25 °C 151
W
T
C
= 100 °C 60
Operating junction and storage temperature range T
J
, T
Stg
- 55 to + 150 °C