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Vishay HFA30PB120 User Manual

Hexfred, Vishay high power products

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Document Number: 93090

For technical questions, contact: [email protected]

www.vishay.com

Revision: 25-Aug-08

1

HEXFRED

®

Ultrafast Soft Recovery Diode, 30 A

HFA30PB120

Vishay High Power Products

FEATURES

• Ultrafast recovery
• Ultrasoft recovery
• Very low I

RRM

• Very low Q

rr

• Guaranteed avalanche
• Specified at operating conditions
• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count

DESCRIPTION

HFA30PB120 is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 30 A continuous current, the
HFA30PB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED

®

product line features

extremely low values of peak recovery current (I

RRM

) and

does not exhibit any tendency to “snap-off” during the
t

b

portion of recovery. The HEXFRED features combine to

offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA30PB120 is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.

PRODUCT SUMMARY

V

R

1200 V

V

F

at 30 A at 25 °C

4.1 V

I

F(AV)

30 A

t

rr

(typical)

47 ns

T

J

(maximum)

150 °C

Q

rr

(typical)

120 nC

dI

(rec)M

/dt (typical) at 125 °C

240 A/µs

I

RRM

(typical)

4.7 A

TO-247AC modified

Base

common

cathode

2

1

3

Anode

2

Anode

1

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL

TEST

CONDITIONS

VALUES

UNITS

Cathode to anode voltage

V

R

1200

V

Maximum continuous forward current

I

F

T

C

= 100 °C

30

A

Single pulse forward current

I

FSM

120

Maximum repetitive forward current

I

FRM

90

Maximum power dissipation

P

D

T

C

= 25 °C

350

W

T

C

= 100 °C

140

Operating junction and storage temperature range

T

J

, T

Stg

- 55 to + 150

°C

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