Panasonic Schottky Barrier Diodes MA3SE020G - Manual

Schottky Barrier Diodes (SBD)
1 Publication date: October 2007 SKH00213AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3SE020G
Silicon epitaxial planar type
For cellular phone
■ Features
• High-frequency wave detection is possible
• Low forward voltage V
F
• Small terminal capacitance C
t
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F1
I
F
= 1 mA 0.40 V
V
F2
I
F
= 35 mA 1.0
Reverse current I
R
V
R
= 15 V
200 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz
1.2 pF
Forward dynamic resistance r
f
I
F
= 5 mA
9
Ω
Parameter Symbol Rating Unit
Reverse voltage V
R
20 V
Maximum peak reverse voltage V
RM
20 V
Forward current Single I
F
35 mA
Series 25
Peak forward Single I
FM
100 mA
current Series 70
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
■ Package
• Code
SSMini3-F3
• Pin Name
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
■ Marking Symbol: M6B
■ Internal Connection
1 2
3