Panasonic Schottky Barrier Diodes MA3S795EG - Manual

Schottky Barrier Diodes (SBD)
Publication date: October 2008 SKH00236AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S795EG
Silicon epitaxial planar type
For switching
For wave detection
 Features
 High-density mounting is possible
 Forward voltage V
F
, optimum for low voltage rectification:V
F
< 0.3 V
 Optimum for high frequency rectification because of its short
reverse recovery time t
rr
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Maximum peak reverse voltage V
RM
30 V
Forward current
Single
I
F
30
mA
Double 20
Peak forward current
Single
I
FM
150
mA
Double 110
Junction temperature T
j
125 ° C
Storage time T
stg
–55 to +125 ° C
 Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F1
I
F
= 1 mA 0.3 V
V
F2
I
F
= 30 mA 1.0
Reverse current I
R
V
R
= 30 V 30 m A
Terminal capacitance C
t
V
R
= 1 V, f = 1 MHz 1.5 pF
Reverse recovery time * t
rr
I
F
= I
R
= 10 mA, I
rr
= 1 mA,
R
L
= 100 W
1.0 ns
Detection efficiency η
V
IN
= 3 V
(peak)
, f = 30 MHz
R
L
= 3.9 kW, C
L
= 10 pF
65 %
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
4. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p = 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
 Package
 Code
SSMini3-F3

Pin Name
1: Anode 1
2: Anode 2
3: Cathode
 Marking Symbol: M3D
 Internal Connection
1 2
3