Zilog EZ80F916 - Manual (Page 28)

eZ80F91 Modular Development Kit
User Manual
UM017010-0112 eZ80F91 Module Operational Description
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2. Ensure that R14 is in place.
3. Connect the negative (–) battery lead to GND.
4. Connect the positive (+) battery lead to J10.
On-Chip Flash Memory
The eZ80F91 MCU on the eZ80F91 Module features 256 KB of on-chip
Flash memory, which can be programmed a single byte at a time, or in
bursts of up to 256 bytes. Write operations can be performed using either
memory or I/O instructions. Erasing bytes in Flash memory returns them
to a value of
FFh . Both the MASS ERASE and PAGE ERASE operations
are self-timed by the Flash controller, leaving the CPU free to execute
other operations in parallel. Upon power-up, on-chip Flash memory is
located in the address range
000000h-03FFFFh . Four wait states are
programmed in Flash Control Register F8h .
On-chip Flash memory is prioritized over all external chip selects, can be
enabled or disabled (power-on enabled), and can be programmed within
any 256 KB address space in the 16 MB address range.
The eZ80F91 Module features the following memory configurations:
•
8 KB on-chip SRAM
•
128 KB off-chip SRAM
•
256 KB on-chip Flash

To learn more about the programming of internal Flash memory, refer to
the
eZ80F91 ASSP Product Specification (PS0270) .
External Flash Memory
The eZ80F91 MDS Adapter Board provides a footprint for 2 MB of exter-
nal Flash memory. The eZ80F91 Mini Enet Module supports this external