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Mobl, Document history page – Cypress CY62148EV30 User Manual

Page 11

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MoBL

®

CY62148EV30

Document #: 38-05576 Rev. *G

Page 11 of 12

Document History Page

Document Title: CY62148EV30 MoBL

®

4-Mbit (512K x 8) Static RAM

Document Number: 38-05576

Revision

ECN

Submission

Date

Orig. of

Change

Description of Change

**

223225

See ECN

AJU

New data sheet

*A

247373

See ECN

SYT

Changed from Advance Information to Preliminary

Moved Product Portfolio to Page 2

Changed V

CC

stabilization time in footnote #7 from 100

μs to 200 μs

Changed I

CCDR

from 2.0

μA to 2.5 μA

Changed typo in Data Retention Characteristics (t

R

) from 100

μs to t

RC

ns

Changed t

OHA

from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin

Changed t

HZOE

, t

HZWE

from 12 to 15 ns for 35 ns Speed Bin and 15 to 18 ns for

45 ns Speed Bin

Changed t

SCE

from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns for 45 ns

Speed Bin

Changed t

HZCE

from 12 to 18 ns for 35 ns Speed Bin and 15 to 22 ns for 45 ns

Speed Bin

Changed t

SD

from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for

45 ns Speed Bin

Changed t

DOE

from 15 to 18 ns for 35 ns Speed Bin

Changed Ordering Information to include Pb-Free Packages

*B

414807

See ECN

ZSD

Changed from Preliminary information to Final

Changed the address of Cypress Semiconductor Corporation on Page #1 from

“3901 North First Street” to “198 Champion Court”

Removed 35ns Speed Bin

Removed “L” version of CY62148EV30

Changed ball C3 from DNU to NC.

Removed the redundant footnote on DNU.

Changed I

CC

(max) value from 2 mA to 2.5 mA and I

CC

(Typ) value from

1.5 mA to 2 mA at f=1 MHz

Changed I

CC

(Typ) value from 12 mA to 15 mA at f = f

max

Changed I

SB1

and I

SB2

Typ values from 0.7

μA to 1 μA and Max values from 2.5

μA to 7 μA.

Changed the AC test load capacitance value from 50pF to 30pF.

Changed I

CCDR

from 2.5

μA to 7 μA.

Added I

CCDR

typical value.

Changed t

LZOE

from 3 ns to 5 ns

Changed t

LZCE

and t

LZWE

from 6 ns to 10 ns

Changed t

HZCE

from 22 ns to 18 ns

Changed t

PWE

from 30 ns to 35 ns.

Changed t

SD

from 22 ns to 25 ns.

Updated the package diagram 36-pin VFBGA from *B to *C

Added 32-pin SOIC package diagram and pin diagram

Updated the ordering information table and replaced the Package Name column

with Package Diagram.

*C

464503

See ECN

NXR

Included Automotive Range in product offering

Updated Thermal Resistance table

Updated the Ordering Information

*D

833080

See ECN

VKN

Added footnote 8

Added V

IL

spec for SOIC package

*E

890962

See ECN

VKN

Removed Automotive part and its related information

Added footnote 2 related to SOIC package

Added footnote 9 related to I

SB2

Added AC values for 55 ns Industrial-SOIC range

Updated Ordering Information table

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