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Switching characteristics – Cypress CY62147DV30 User Manual

Page 5

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CY62147DV30

Document #: 38-05340 Rev. *F

Page 5 of 12

Switching Characteristics

Over the Operating Range

[14]

Parameter

Description

45 ns

[11]

55 ns

70 ns

Unit

Min.

Max.

Min.

Max.

Min.

Max.

Read Cycle

t

RC

Read Cycle Time

45

55

70

ns

t

AA

Address to Data Valid

45

55

70

ns

t

OHA

Data Hold from Address Change

10

10

10

ns

t

ACE

CE LOW to Data Valid

45

55

70

ns

t

DOE

OE LOW to Data Valid

25

25

35

ns

t

LZOE

OE LOW to LOW Z

[15]

5

5

5

ns

t

HZOE

OE HIGH to High Z

[15, 16]

15

20

25

ns

t

LZCE

CE LOW to Low Z

[15]

10

10

10

ns

t

HZCE

CE HIGH to High Z

[15, 16]

20

20

25

ns

t

PU

CE LOW to Power-Up

0

0

0

ns

t

PD

CE HIGH to Power-Down

45

55

70

ns

t

DBE

BLE/BHE LOW to Data Valid

45

55

70

ns

t

LZBE

BLE/BHE LOW to Low Z

[15]

10

10

10

ns

t

HZBE

BLE/BHE HIGH to HIGH Z

[15, 16]

15

20

25

ns

Write Cycle

[17]

t

WC

Write Cycle Time

45

55

70

ns

t

SCE

CE LOW to Write End

40

40

60

ns

t

AW

Address Set-up to Write End

40

40

60

ns

t

HA

Address Hold from Write End

0

0

0

ns

t

SA

Address Set-up to Write Start

0

0

0

ns

t

PWE

WE Pulse Width

35

40

45

ns

t

BW

BLE/BHE LOW to Write End

40

40

60

ns

t

SD

Data Set-up to Write End

25

25

30

ns

t

HD

Data Hold from Write End

0

0

0

ns

t

HZWE

WE LOW to High-Z

[15, 16]

15

20

25

ns

t

LZWE

WE HIGH to Low-Z

[15]

10

10

10

ns

Notes:

14. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns (1 V/ns) or less, timing reference levels of V

CC(typ)

/2, input

pulse levels of 0 to V

CC(typ.)

, and output loading of the specified I

OL

/I

OH

as shown in the “AC Test Loads and Waveforms” section.

15. At any given temperature and voltage condition, t

HZCE

is less than t

LZCE

, t

HZBE

is less than t

LZBE

, t

HZOE

is less than t

LZOE

, and t

HZWE

is less than t

LZWE

for any

given device.

16. t

HZOE

, t

HZCE

, t

HZBE

, and t

HZWE

transitions are measured when the outputs enter a high impedence state.

17. The internal Write time of the memory is defined by the overlap of WE, CE

= V

IL

, BHE and/or BLE = V

IL

. All signals must be ACTIVE to initiate a write and any

of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates
the write.

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