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Cypress CY14B101NA User Manual

Features, Functional description, Logic block diagram

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PRELIMINARY

CY14B101LA, CY14B101NA

1 Mbit (128K x 8/64K x 16) nvSRAM

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 001-42879 Rev. *B

Revised January 29, 2009

Features

20 ns, 25 ns, and 45 ns Access Times

Internally organized as 128K x 8 (CY14B101LA) or 64K x 16

(CY14B101NA)

Hands off Automatic STORE on power down with only a small

Capacitor

STORE to QuantumTrap

®

nonvolatile elements initiated by

Software, device pin, or AutoStore

®

on power down

RECALL to SRAM initiated by software or power up

Infinite Read, Write, and Recall Cycles

200,000 STORE cycles to QuantumTrap

20 year data retention

Single 3V +20% to -10% operation

Commercial and Industrial Temperatures

48-ball FBGA, 44-pin TSOP - II, 48-pin SSOP, and 32-pin SOIC

packages

Pb-free and RoHS compliance

Functional Description

The Cypress CY14B101LA/CY14B101NA is a fast static RAM,

with a nonvolatile element in each memory cell. The memory is

organized as 128K bytes of 8 bits each or 64K words of 16 bits

each. The embedded nonvolatile elements incorporate

QuantumTrap technology, producing the world’s most reliable

nonvolatile memory. The SRAM provides infinite read and write

cycles, while independent nonvolatile data resides in the highly

reliable QuantumTrap cell. Data transfers from the SRAM to the

nonvolatile elements (the STORE operation) takes place

automatically at power down. On power up, data is restored to

the SRAM (the RECALL operation) from the nonvolatile memory.

Both the STORE and RECALL operations are also available

under software control.

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Logic Block Diagram

[1, 2, 3]

Note

1. Address A

0

- A

16

for x8 configuration and Address A

0

- A

15

for x16 configuration.

2. Data DQ

0

- DQ

7

for x8 configuration and Data DQ

0

- DQ

15

for x16 configuration.

3. BHE and BLE are applicable for x16 configuration only.

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