Diodes PAM8908 - Manual (Page 4)

PAM8901 / PAM8908
Document number: DSxxxxx Rev. 1 - 1
4 of 12
www.diodes.com
December 2012
© Diodes Incorporated
PAM8901 / PAM8908
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, PVDD = 3.6V, RL = 16 Ω unless otherwise specified.)
Parameter Symbol Test Conditions Min Typ Max Units
Supply Voltage PV DD
2.5 5.5 V
Quiescent Current I Q
EN = PVDD, No Load 4 mA
Output Power per Channel P
O
THD = 1%, f = 1kHz, R
L
= 16 Ω 35
THD = 1%, f = 1kHz, R
L
= 32 Ω 25 mW
Shutdown Current I
SD
EN = 0V, PVDD = 2.5V to 5.5V 0.1 1 µA
EN High Level Input Voltage VIH 1.4 V
EN Low Level Voltage VIL 0.6 V
G0, G1 High Level Input Voltage VGH 1.4 V
G0, G1Low Level Voltage VGL 0.6 V
Output Offset Voltage V
OS
1 5 mV
Closed-Loop Voltage Gain AV
G0 =0V, G1 = 0V -6 dB
G0 =PVDD, G1 = 0V 0 dB
G0 =0V, G1 = PVDD 3 dB
G0 =PVDD, G1 = PVDD 6 dB
Power Supply Rejection Ratio PSRR Input A C-GND, f + 1KHz, VPP = 200mV 75 dB
Total Harmonic Distortion Plus Noise THD+N P
O
= 20mW, f = 1kHz 0.03 %
Signal to Noise Ratio SNR P
O
= 20mW, into 16 Ω 100 dB
Noise Output Voltage EN A-Weighted 10 µV
RMS
Crosstalk CS PO = 15mW, f = 1kHz 80 dB
Chargepump Switching Frequency f
OSC
1.2 1.5 1.8 MHz
Start-Up Time t
ON
EN from low to high 0.4 Ms
Thermal Shutdown OTP Threshold 150 °C
Thermal Shutdown Hystersis OTPH Hysteresis 20 °C