Diodes PAM8404 - Manual (Page 5)

PAM8404
Document number: DSxxxxx Rev. 1 - 1
5 of 18
www.diodes.com
November 2012
© Diodes Incorporated
PAM8404
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, AVDD = PVDD = 5V, GND = PGND = 0V, unless otherwise specified.)
WCSP2x2-16
Symbol Parameter Test Conditions Min Typ Max Units
V
DD
Supply Power 2.5 5.5 V
P
O
Output Power
THD+N = 10%, f = 1kHz, R
L
= 4Ω
V
DD
= 5.0V 2.2
W
V
DD
= 3.6V 1.2
THD+N = 1%, f = 1kHz, R
L
= 4Ω
V
DD
= 5.0V 1.8
W
V
DD
= 3.6V 1
THD+N = 10%, f = 1kHz, R
L
= 8Ω
V
DD
= 5.0V 1.5
W
V
DD
= 3.6V 0.8
THD+N = 1%, f = 1kHz, R
L
= 8Ω
V
DD
= 5.0V 1.2
W
V
DD
= 3.6V 0.6
THD+N
Total Harmonic Distortion Plus
Noise
V
DD
= 5.0V, Po = 0.5W, R
L
= 8Ω
f = 1kHz
0.3
%
V
DD
= 3.6V, Po = 0.5W, R
L
= 8Ω 0.4
V
DD
= 5.0V, Po = 1W, R
L
= 4Ω
f = 1kHz
0.3
%
V
DD
= 3.6V, Po = 1W, R
L
= 4Ω 0.2
PSRR Power Supply Ripple Rejection
V
DD
= 5.0V, Inputs AC-Grounded with
C
IN
= 1.0μF
f = 217kHz -50 dB
C
S
Crosstalk
V
DD
= 5.0V, Po = 0.5W, R
L
= 4Ω,
Gv = 23dB
f = 1kHz -70 dB
SNR Signal-to-Noise V
DD
= 5V, V
ORMS
= 1VGv = 23dB A-weighting 85 dB
V
N
Output Noise
V
DD
= 5V, Inputs AC-Grounded with
C
IN
= 0.47μF
A-weighting 34
µV
BW 22Hz – 22kHz No A-weighting 54
Dyn Dynamic Range V
DD
= 5V, THD = 1% A-weighting 98 dB
η Efficiency
R
L
= 8Ω, THD = 10%
f = 1kHz
85
%
R
L
= 4Ω, THD = 10% 75
I
Q
Quiescent Current
V
DD
= 5.0V
No load
12
mA
V
DD
= 3.6V 7
I
SD
Shutdown Current V
DD
= 2.5V to 5.5V V
SD
= 0.3V < 1 µA
R
DS(ON)
Static Drain-to-Source On-State
Resistor
I
DS
= 500mA,V
GS
= 5V
PMOS 500
mΩ
NMOS 460
fsw Switching Frequency V
DD
= 5V 300 kHz
V
OS
Output Offset Voltage V
IN
= 0V, V
DD
= 5V 20 mV
Gain Closed-Loop Voltage Gain V
DD
= 5V, RL = 4Ω, f = 1kHz
G0 = L, G1 = L 6
dB
G0 = H, G1 = L 12
G0 = L, G1 = H 18
G0 = H, G1 = H 24
OTP Over Temperature Protection
No Load, Junction Temperature V
DD
= 5V
150
°C
OTH Over Temperature Hysterisis 50