Diodes PAM8404 - Manual (Page 4)

PAM8404
Document number: DSxxxxx Rev. 1 - 1
4 of 18
www.diodes.com
November 2012
© Diodes Incorporated
PAM8404
A Product Line of
Diodes Incorporated
Thermal Information
Parameter Package Symbol Max Unit
Thermal Resistance (Junction to Ambient)
WCSP2x2-16
θ
JA
64
°C/W
QFN4x4-20 31
Thermal Resistance (Junction to Case)
WCSP2x2-16
θ
JC
—
QFN4x4-20 13
Electrical Characteristics
(@T
A
= +25°C, AVDD = PVDD = 5V, GND = PGND = 0V, unless otherwise specified.)
QFN4X4-20
Symbol Parameter Test Conditions Min Typ Max Units
V
DD
Supply Power 2.5 5.5 V
P
O
Output Power
THD+N = 10%, f = 1kHz, R
L
= 4Ω
V
DD
= 5.0V 3
W
V
DD
= 3.6V 1.5
THD+N = 1%, f = 1kHz, R
L
= 4Ω
V
DD
= 5.0V 2.35
W
V
DD
= 3.6V 1.2
THD+N = 10%, f = 1kHz, R
L
= 8Ω
V
DD
= 5.0V 1.7
W
V
DD
= 3.6V 0.9
THD+N = 1%, f = 1kHz, R
L
= 8Ω
V
DD
= 5.0V 1.4
W
V
DD
= 3.6V 0.7
THD+N
Total Harmonic Distortion Plus
Noise
V
DD
= 5.0V, Po = 0.5W, R
L
= 8Ω
f = 1kHz
0.15
%
V
DD
= 3.6V, Po = 0.5W, R
L
= 8Ω 0.27
V
DD
= 5.0V, Po = 1W, R
L
= 4Ω
f = 1kHz
0.23
%
V
DD
= 3.6V, Po = 1W, R
L
= 4Ω 0.24
PSRR Power Supply Ripple Rejection
V
DD
= 5.0V, Inputs AC-Grounded with
C
IN
= 1.0μF
f = 100kHz -48
dB
f = 1kHz -63
C
S
Crosstalk
V
DD
= 5V, Po = 0.5W, R
L
= 4Ω,
Gv = 23dB
f = 1kHz -93 dB
SNR Signal-to-Noise V
DD
= 5V, V
ORMS
= 1VGv = 23dB A-weighting 87 dB
V
N
Output Noise
V
DD
= 5V, Inputs AC-Grounded with
C
IN
= 1μF
A-weighting 43
µV
BW 22Hz – 22kHz No A-weighting 59
Dyn Dynamic Range V
DD
= 5V, THD = 1% A-weighting 97 dB
η Efficiency
R
L
= 8Ω, THD = 10%
f = 1kHz
89
%
R
L
= 4Ω, THD = 10% 84
I
Q
Quiescent Current
V
DD
= 5.0V
No load
11
mA
V
DD
= 3.6V 6
I
SD
Shutdown Current V
DD
= 5.5V V
SD
= 0.3V < 1 µA
R
DS(ON)
Static Drain-to-Source On-State
Resistor
I
DS
= 500mA,V
GS
= 5V
PMOS 250
mΩ
NMOS 170
fsw Switching Frequency V
DD
= 3V to 5V 300 kHz
V
OS
Output Offset Voltage V
IN
= 0V, V
DD
= 5V 10 mV
Gain Closed-Loop Voltage Gain V
DD
= 5V, RL = 4Ω, f = 1kHz
G0 = L, G1 = L 6
dB
G0 = H, G1 = L 12
G0 = L, G1 = H 18
G0 = H, G1 = H 24
OTP Over Temperature Protection
No Load, Junction Temperature V
DD
= 5V
150
°C
OTH Over Temperature Hysterisis 50