Lm4040, Precision micropower shunt voltage references, Electrical characteristics – Diodes LM4040 User Manual
Page 5
LM4040
PRECISION MICROPOWER SHUNT VOLTAGE REFERENCES
LM4040
Document number: DS33195 Rev. 5 - 2
5 of 12
March 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
Electrical Characteristics
(cont.) (Test conditions: T
AMB
= 25°C, unless otherwise specified.)
LM4040-5.0
Symbol
Parameter
Conditions
Typ.
LM4040
B Limits
LM4040
C Limits
LM4040
D Limits
Units
T
AMB
V
REF
Reverse breakdown
voltage
I
R
= 100µA
25°C
5.0
V
Reverse breakdown
voltage tolerance
I
R
= 100µA
25°C
±10 ±25 ±50
mV
-40 to +85°C
±43
±58
±99
-40 to +125°C
±60
±75
±125
I
RMIN
Minimum operating
current
25°C
54
74 74 79
µA
-40 to +85°C
80 80 85
-40 to +125°C
83
83
88
ΔV
R
/
ΔT
Average reverse
breakdown voltage
temperature coefficient
I
R
= 10mA
-40 to +125°C
±30
I
R
= 1mA
±20
±100 ±100 ±150
ppm/°C
I
R
= 100µA
±20
ΔV
R
/
ΔI
R
Reverse breakdown
change with current
I
RMIN
I
R
< 1mA
25°C
0.5
1.0 1.0 1.3
mV
-40 to +85°C
1.4 1.4 1.8
-40 to +125°C
1.4
1.4
1.8
1mA < I
R
< 15mA
25°C 3.5 8.0 8.0 10.0
-40 to +85°C
12.0 12.0 15.0
-40 to +125°C
12.0
12.0
15.0
Z
R
Dynamic output
impedance
I
R
= 1mA, f = 120Hz
I
AC
= 0.1I
R
0.5
1.1 1.1 1.5
Ω
e
n
Noise voltage
I
R
= 100µA
10Hz < f < 10kHz
80
µV
RMS
V
R
Long term stability (non
cumulative)
t = 1000Hrs, I
R
= 100µA
120
ppm
V
HYST
Themal hysteresis
ΔT = -40°C to =125°C
0.08
%