Lm4040, Precision micropower shunt voltage references, Electrical characteristics – Diodes LM4040 User Manual
Page 4
LM4040
PRECISION MICROPOWER SHUNT VOLTAGE REFERENCES
LM4040
Document number: DS33195 Rev. 5 - 2
4 of 12
March 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
Electrical Characteristics
(cont.) (Test conditions: T
AMB
= 25°C, unless otherwise specified.)
LM4040-3.0
Symbol
Parameter
Conditions
Typ.
LM4040
B Limits
LM4040
C Limits
LM4040
D Limits
Units
T
AMB
V
REF
Reverse breakdown
voltage
I
R
= 100µA
25°C
3.0
V
Reverse breakdown
voltage tolerance
I
R
= 100µA
25°C
±6 ±15 ±30
mV
-40 to +85°C
±26
±34
±59
-40 to +125°C
TBD
±45
±75
I
RMIN
Minimum operating
current
25°C
47
62 62 67
µA
-40 to +85°C
67 67 72
-40 to +125°C
70
70
75
ΔV
R
/
ΔT
Average reverse
breakdown voltage
temperature coefficient
I
R
= 10mA
-40 to +125°C
±20
I
R
= 1mA
±15
±100 ±100 ±150
ppm/°C
I
R
= 100µA
±15
ΔV
R
/
ΔI
R
Reverse breakdown
change with current
I
RMIN
I
R
< 1mA
25°C
0.4
0.8 0.8 1.0
mV
-40 to +85°C
1.1 110 1.3
-40 to +125°C
1.1
1.1
1.3
1mA < I
R
< 15mA
25°C
2.7
6.0 6.0 8.0
-40 to +85°C
9.0 9.0 11.0
-40 to +125°C
9.0
9.0
11.0
Z
R
Dynamic output
impedance
I
R
= 1mA, f = 120Hz
I
AC
= 0.1I
R
0.4
0.9 0.9 1.2
Ω
e
n
Noise voltage
I
R
= 100µA
10Hz < f < 10kHz
35
µV
RMS
V
R
Long term stability (non
cumulative)
t = 1000Hrs, I
R
= 100µA
120
ppm
V
HYST
Themal hysteresis
ΔT = -40°C to = 125°C
0.08
%