Diodes LMN400E01 User Manual
Page 6
LMN400E01
Document number: DS30750 Rev. 8 - 2
6 of 10
July 2011
© Diodes Incorporated
LMN400E01
Typical N-Channel MOSFET (ESD Protected) Characteristics
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Output Characteristics
DS
I,
D
R
AIN
C
U
R
R
EN
T
(A
)
D
V
, GATE-SOURCE VOLTAGE
Fig. 11 Transfer Characteristics
GS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
T = 150 C
A
°
T = 125 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = -55 C
A
°
V
= 10V
DS
T , JUNCTION TEMPERATURE (°C)
Fig. 12 Gate Threshold Voltage
vs. Junction Temperature
j
0
0.5
1
1.5
2
-50
-25
0
25
50
75
100
125
150
V
= V
V
= 10V
I = 1mA
Pulsed
DS
GS
DS
D
0.1
I DRAIN CURRENT (A)
Fig. 13 Static Drain-Source On-Resistance
vs. Drain Current
D
,
1
10
T = 150 C
A
°
T = 125 C
A
°
T = 85 C
A
°
T = -55 C
A
°
T = 25 C
A
°
T = 0 C
A
°
T = -25 C
A
°
V
= 10V
Pulsed
GS
R
, S
T
A
T
IC
D
R
AI
N
-S
O
U
R
C
E
ON-
R
E
S
IS
T
A
NCE
(
)
DS
(on)
Ω
1
I , DRAIN CURRENT (A)
Fig. 14 Static Drain-Source On-Resistance
vs. Drain Current
D
10
V
= 5V
Pulsed
GS
T = 150 C
A
°
T = 125 C
A
°
T = 85 C
A
°
T = -55 C
A
°
T = 25 C
A
°
T = -25 C
A
°
T = 0 C
A
°
R
, S
T
A
T
IC D
RAI
N-
S
O
URCE
ON-R
ES
IS
T
A
N
C
E
(
)
D
S
(on)
Ω
0
V
GATE SOURCE VOLTAGE (V)
Fig. 15 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
GS,
R
, S
T
A
T
IC
D
R
A
IN
-S
OU
R
C
E
ON-
R
ESIST
A
NCE (
)
DS
(o
n
)
Ω