Diodes LMN400E01 - Manual (Page 5)

LMN400E01
Document number: DS30750 Rev. 8 - 2
5 of 10
www.diodes.com
July 2011
© Diodes Incorporated
LMN400E01
Pre-Biased PNP Transistor Characteristics
I , COLLECTOR CURRENT (A)
Fig. 5 V vs. I @ I /I = 10
C
CE(SAT) C C B
V,
C
O
LL
E
C
T
O
R
V
O
L
T
AG
E
(
V)
CE
(S
A
T
)
I /I = 10
C B
T = 150 C
A
°
T = 125 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = -55 C
A
°
I , COLLECTOR CURRENT (A)
Fig. 6 V vs. I @ I /I = 20
C
CE(SAT) C C B
V,
C
OL
L
E
C
TO
R
VO
L
T
A
G
E
(
V)
CE
(S
A
T
)
I /I = 20
C B
T = 150 C
A
°
T = 125 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T =-55 C
A
°
I , COLLECTOR CURRENT (mA)
Fig. 7 V vs. I @ I /I = 10
C
BE(SAT) C C B
V,
B
A
S
E
E
M
IT
T
E
R
VO
L
T
AG
E
(V
)
BE(
SA
T
)
I /I = 10
C B
T = 150 C
A
°
T = 125 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = -55 C
A
°
I , COLLECTOR CURRENT (mA)
Fig. 8 V vs. I @ V = 5V
C
BE(ON) C CE
V,
B
A
S
E
E
M
IT
T
E
R
V
O
L
T
A
G
E
(V
)
BE
(O
N
)
I /I = 10
V = 5V
C B
CE
T = 150 C
A
°
T = 125 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = -55 C
A
°
I , COLLECTOR CURRENT (mA)
Fig. 9 h vs. I @ V = 5V
C
FE C CE
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
V = 5V
CE