Typical characteristics – Diodes LMN200B02 User Manual
Page 4
DS30658 Rev. 7 - 2
4 of 9
LMN200B02
© Diodes Incorporated
Electrical Characteristics:
N-MOSFET with Gate Pull-Down Resistor (Q2)
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min Typ Max Unit
Test
Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BV
DSS
V
(BR)DSS
60
⎯
⎯
V
V
GS
= 0V, I
D
= 10
μA
Zero Gate Voltage Drain Current (Drain Leakage
Current)
I
DSS
⎯
⎯
1
μA
V
GS
=0V, V
DS
= 60V
Gate-Body Leakage Current, Forward
I
GSSF
⎯
⎯
0.95 mA
V
GS
= 20V, V
DS
= 0V
Gate-Body Leakage Current, Reverse
I
GSSR
⎯
⎯
-0.95 mA
V
GS
= -20V, V
DS
= 0V
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply
Voltage)
V
GS(th)
1 1.9 2.2 V
V
DS
= V
GS
, I
D
= 0.25mA
Static Drain-Source On-State Voltage
V
DS(on)
⎯
0.10 1.5
V
V
GS
= 5V, I
D
= 50mA
⎯
0.15 3.75
V
GS
= 10V, I
D
= 115mA
On-State Drain Current
I
D(on)
500
⎯
⎯
mA
V
GS
= 10V,
V
DS
≥2
X
V
DS(ON)
Static Drain-Source On-Resistance
R
DS(on)
⎯
1.6 3
Ω
V
GS
= 5V, ID = 50mA
⎯
1.4 2
V
GS
= 10V, ID = 500mA
Forward Transconductance
g
FS
80 240
⎯
mS
V
DS
≥2
X
V
DS(ON)
, I
D
= 115 mA
80 350
⎯
V
DS
≥2
X
V
DS(ON)
, I
D
= 200 mA
Gate Pull-Down Resistor, +/- 30%
R3
⎯
37
⎯
K
Ω
⎯
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
⎯
50 pF
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
⎯
⎯
25 pF
Reverse Transfer Capacitance
C
rss
⎯
⎯
5 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(on)
⎯
⎯
20 ns
V
DD
= 30V, V
GS
=10V,
I
D
= 200mA,
R
G
= 25 Ohm, R
L
= 150 Ohm
Turn-Off Delay Time
t
D(off)
⎯
⎯
40 ns
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage
V
SD
⎯
0.90 1.5 V
V
GS
= 0V, I
S
= 115 mA
Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current)
I
S
⎯
⎯
115 mA
⎯
Maximum Pulsed Drain-Source Diode Forward
Current
I
SM
⎯
⎯
800 mA
⎯
Notes: 4. Short duration pulse test used to minimize self-heating effect.
Typical Characteristics
0
50
25
50
75
100
125
150
175
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 3 Max Power Dissipation vs.
Ambient Temperature (Total Device)
A
100
150
200
0
(Note 3)
250
300
350