Diodes LMN200B02 User Manual
Page 3
DS30658 Rev. 7 - 2
3 of 9
LMN200B02
© Diodes Incorporated
Electrical Characteristics: Pre-Biased PNP Transistor (Q1)
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min Typ Max Unit Test
Condition
OFF CHARACTERISTICS
Collector-Base Cut Off Current
I
CBO
⎯
⎯
-100 nA
V
CB
= -50V, I
E
= 0
Collector-Emitter Cut Off Current
I
CEO
⎯
⎯
-500 nA
V
CE
= -50V, I
B
= 0
Emitter-Base Cut Off Current
I
EBO
⎯
-0.5 -1 mA
V
EB
= -5V, I
C
= 0
Collector-Base Breakdown Voltage
V
(BR)CBO
-50
⎯
⎯
V
I
C
= -10 uA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-50
⎯
⎯
V
I
C
= -2 mA, I
B
= 0
Input Off Voltage
V
I(OFF)
⎯
-0.55 -0.3 V
V
CE
= -5V, I
C
= -100uA
Output Voltage
V
OH
-4.9
⎯
⎯
V
V
CC
= -5V, V
B
= -0.05V,
R
L
= 1K
Ouput Current (leakage current same as I
CEO
) I
O(OFF)
⎯
⎯
-500 nA
V
CC
= -50V, V
I
= 0V
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
⎯
-0.15 V
I
C
= -10 mA, I
B
= -0.5 mA
⎯
⎯
-0.2 V
I
C
= -50mA, I
B
= -5mA
⎯
⎯
-0.2 V
I
C
= -20mA, I
B
= -1mA
⎯
⎯
-0.25 V
I
C
= -100mA, I
B
= -10mA
⎯
⎯
-0.25 V
I
C
= -200mA, I
B
= -10mA
⎯
⎯
-0.3 V
I
C
= -200mA, I
B
= -20mA
Equivalent On-Resistance*
R
CE(SAT)
⎯
⎯
1.5
Ω
I
C
= -200mA, I
B
= -10mA
DC Current Gain
h
FE
60 150
⎯
⎯
V
CE
= -5V, I
C
= -20 mA
60 215
⎯
⎯
V
CE
= -5V, I
C
= -50 mA
60 245
⎯
⎯
V
CE
= -5V, I
C
= -100 mA
60 250
⎯
⎯
V
CE
= -5V, I
C
= -200 mA
Input On Voltage
V
I(ON)
-2.45 -0.7
⎯
V
V
O
= -0.3V, I
C
= -2 mA
Output Voltage (equivalent to V
CE(SAT)
or
V
O(ON)
) V
OL
⎯
-0.065 -0.15
V
V
CC
= -5V,
V
B
= -2.5V,
I
o
/I
I
= -50mA /-2.5mA
Input Current
I
i
⎯
-9 -28 mA
V
I
= -5V
Base-Emitter Turn-on Voltage
V
BE(ON)
⎯
-1.13 -1.3 V
V
CE
= -5V, I
C
= 200mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
-3.2 -3.6
V
I
C
= -50mA, I
B
= -5mA
⎯
-4.6 -5.5
I
C
= -80mA, I
B
= -8mA
Input Resistor (Base), +/- 30%
R2
⎯
0.47
⎯
K
Ω
⎯
Pull-up Resistor (Base to Vcc supply), +/- 30%
R1
⎯
10
⎯
K
Ω
⎯
Resistor Ratio (Input Resistor/Pull-up
resistor) +/-
20%
R1/R2
⎯
21
⎯
⎯
⎯
SMALL SIGNAL CHARACTERISTICS
Transition Frequency (Gain Bandwidth Product)
f
T
⎯
200
⎯
MHz
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
Collector Capacitance, (C
cbo
-Output Capacitance)
C
C
⎯
20
⎯
pF
V
CB
= -10V, I
E
= 0A,
f = 1MHz
* Pulse Test: Pulse width, tp<300
μS, Duty Cycle, d<=0.02