Diodes LMN200B02 - Manual (Page 2)

DS30658 Rev. 7 - 2 2 of 9
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LMN200B02
© Diodes Incorporated
Maximum Ratings:
Sub-Component Device: Pre-Biased PNP Transistor (Q1)
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-50 V
Supply Voltage V
CC
-50 V
Input Voltage V
in
+5 to -6 V
Output Current I
C
-200 mA
Sub-Component Device: N-MOSFET With Gate
Pull-Down Resistor (Q2)
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
60 V
Drain Gate Voltage (R
GS
≤1M Ohm) V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed (tp<50 uS)
V
GSS
+/-20
V
+/-40
Drain Current (Page 1: Note 3) Continuous (V
gs
= 10V)
Pulsed (tp <10 uS, Duty Cycle <1%)
I
D
115
mA
800
Continuous Source Current I
S
115 mA