Diodes DMC3021LK4 User Manual
Page 8
DMC3021LK4
Document number: DS35082 Rev. 5 - 2
8 of 10
April 2014
© Diodes Incorporated
DMC3021LK4
NEW PROD
UC
T
0
5
10
15
20
25
30
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 21 Typical Drain-Source Leakage Current vs. Voltage
-I
, L
EAK
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
0.1
1
10
100
1,000
10,000
T =
A
85°C
T =
A
125°C
T =
A
150°C
T = 25°C
A
10
100
1,000
10,000
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE(V)
DS
Fig. 22 Typical Junction Capacitance
C
iss
C
oss
C
rss
f = 1MHz
C
T, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
Q - (nC)
G
Fig. 23 Gate Charge Characteristics
V (
V
)
GS
0
2
4
6
8
10
0
5
10
15
20
25
V
= 15V
I = 6A
DS
D
0.1
1
10
100
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 24 SOA, Safe Operation Area
0.01
0.1
1
10
100
P = 10s
W
DC
P = 1s
W
P = 100ms
W
P = 10ms
W
-I
, D
R
AI
N
C
U
R
R
ENT (A)
D
P = 10µs
W
R
Limited
DS(ON)
T
= 150 C
T = 25 C
Single Pulse
J(MAX)
A
°
°
P = 1ms
W
P = 100µs
W
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
T1, PULSE DURATION TIME (sec)
Fig. 25 Transient Thermal Resistance
r(
t)
, TRANS
IENT THERM
A
L RESI
ST
ANCE
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
D = 0.9
D = 0.7
R
(t) = r(t) * R
θ
θ
JA
JA
R
= 46°C/W
Duty Cycle, D = t1 / t2
θJA