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Electrical characteristics n-channel – q1 – Diodes DMC3021LK4 User Manual

Page 3

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DMC3021LK4

Document number: DS35082 Rev. 5 - 2

3 of 10

www.diodes.com

April 2014

© Diodes Incorporated

DMC3021LK4

NEW PROD

UC

T





Electrical Characteristics N-CHANNEL – Q1

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage

BV

DSS

30

— V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current @T

C

= +25°C

I

DSS

— — 1.0

μA

V

DS

= 30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

— —

±100 nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

V

GS(th)

1 1.5 2.1 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS(ON)

14 21

mΩ

V

GS

= 10V, I

D

= 7A

18 32

V

GS

= 4.5V, I

D

= 5.6A

Forward Transfer Admittance

|Y

fs

|

8.5 — S

V

DS

= 5V, I

D

= 7A

Diode Forward Voltage

V

SD

0.7 1.0 V V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance

C

iss

751

pF

V

DS

= 10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

121

pF

Reverse Transfer Capacitance

C

rss

110

pF

Gate Resistance

R

g

1.5

V

DS

= 10V, V

GS

= 0V,f = 1.0MHz

Total Gate Charge (4.5V)

Q

g

9

nC

V

GS

= 10V, V

DS

= 15V,

I

D

= 6A

Total Gate Charge (10V)

Q

g

17.4

nC

Gate-Source Charge

Q

gs

2.2

nC

Gate-Drain Charge

Q

gd

3

nC

Turn-On Delay Time

t

D(on)

2.5

ns

V

DD

= 15V, V

GS

= 10V,

R

G

= 6Ω, R

L

= 1.8Ω, I

D

= 6.7A

Turn-On Rise Time

t

r

6.6

ns

Turn-Off Delay Time

t

D(off)

19.0

ns

Turn-Off Fall Time

t

f

6.3

ns

Notes:

8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.

0

5

10

15

20

25

30

0

0.5

1

1.5

2

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig.1 Typical Output Characteristics

V

= 2.5V

GS

V

= 3.0V

GS

V

= 3.5V

GS

V

= 4.0V

GS

V

= 4.5V

GS

V

= 10V

GS

I,

D

R

AI

N

C

U

R

R

E

N

T

(A

)

D

0

5

10

15

20

0

1

2

3

4

5

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

T =

A

-55°C

V

= 5.0V

DS

T =

A

25°C

T =

A

85°C

T = 150°C

A

T =

A

125°C

I

, D

R

A

IN C

URRENT

(

A

)

D