Diodes DMC1229UFDB - Manual (Page 7)

DMC1229UFDB
Document number: DS36128 Rev. 4 - 2
7 of 9
www.diodes.com
September 2013
© Diodes Incorporated
DMC1229UFDB
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(T
H
)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-I = 1mA
D
-I = 250µA
D
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 SOA, Safe Operation Area
DS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
T = 150°C
T = 25°C
J(max)
A
V = -10V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
0.01
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)
Figure 10 Transient Thermal Resistance
0.001
0.01
0.1
r(t
),
T
R
ANS
IEN
T
T
H
E
R
MA
L
R
ESI
S
TAN
C
E
1
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
R (t) = r(t) * R
R = 156°C/W
Duty Cycle, D = t1/ t2
 

JA JA
JA