Diodes DMC1229UFDB - Manual (Page 3)

DMC1229UFDB
Document number: DS36128 Rev. 4 - 2
3 of 9
www.diodes.com
September 2013
© Diodes Incorporated
DMC1229UFDB
Electrical Characteristics Q1 N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
12 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1.0 μA V
DS
= 12V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.4 — 1 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
— 17 29
mΩ
V
GS
= 4.5V, I
D
= 5A
— 20 34 V
GS
= 2.5V, I
D
= 4.6A
— 24 44 V
GS
= 1.8V, I
D
= 4.1A
— 30 65 V
GS
= 1.5V, I
D
= 2A
Forward Transfer Admittance |Y
fs
| — 6.5 — S V
DS
= 10V, I
D
= 5A
Diode Forward Voltage V
SD
— 0.6 1.2 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 914 — pF
V
DS
= 6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 132 — pF
Reverse Transfer Capacitance C
rss
— 119 — pF
Gate Resistance R
g
— 1.26 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
— 10.5 — nC
V
DS
= 6V, I
D
= 6.5A
Total Gate Charge (V
GS
= 8V) — 19.6 — nC
Gate-Source Charge Q
gs
— 1.2 — nC
Gate-Drain Charge Q
gd
— 1.6 — nC
Turn-On Delay Time t
D(on)
— 5.0 — ns
V
DD
= 6V, V
GS
= 4.5V,
R
L
= 1.2Ω, R
G
= 1Ω
Turn-On Rise Time t
r
— 10.5 — ns
Turn-Off Delay Time t
D(off)
— 16.6 — ns
Turn-Off Fall Time t
f
— 4.1 — ns
Electrical Characteristics Q2 P-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-12 — — V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — -1.0 μA V
DS
= -12V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.4 — -1 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
— 37 61
mΩ
V
GS
= -4.5V, I
D
= -3.6A
— 47 81 V
GS
= -2.5V, I
D
= -3.2A
— 63 115 V
GS
= -1.8V, I
D
= -1A
— 90 170 V
GS
= -1.5V, I
D
= -1A
Forward Transfer Admittance |Y
fs
| — 5.5 — S V
DS
= -10V, I
D
= -3.6A
Diode Forward Voltage V
SD
— -0.65 -1.2 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 915 — pF
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 225 — pF
Reverse Transfer Capacitance C
rss
— 183 — pF
Gate Resistance R
g
— 56.9 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
— 10.7 — nC
V
DS
= -6V, I
D
= -4.3A
Total Gate Charge (V
GS
= -8V) — 17.9 — nC
Gate-Source Charge Q
gs
— 1.7 — nC
Gate-Drain Charge Q
gd
— 3.0 — nC
Turn-On Delay Time t
D(on)
— 5.7 — ns
V
DD
= -6V, V
GS
= -4.5V,
R
L
= 1.6Ω, R
G
= 1Ω
Turn-On Rise Time t
r
— 11.5 — ns
Turn-Off Delay Time t
D(off)
— 27.8 — ns
Turn-Off Fall Time t
f
— 26.4 — ns
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.