Electrical characteristics q2 p-channel, Dmc1017upd – Diodes DMC1017UPD User Manual
Page 5

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DMC1017UPD
Document number: DS36903 Rev. 1 - 0
5 of 9
April 2014
© Diodes Incorporated
DMC1017UPD
Electrical Characteristics Q2 P-Channel
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-12
⎯
⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-1 µA
V
DS
= -12V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.6
⎯
-1.5 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
21 32
mΩ
V
GS
= -4.5V, I
D
= -8.9A
⎯
41 53
V
GS
= -2.5V, I
D
= -6.9A
Diode Forward Voltage
V
SD
⎯
-0.7 -1.2 V
V
GS
= 0V, I
S
= -2.9A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
⎯
2100
⎯
pF
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
⎯
872
⎯
Reverse Transfer Capacitance
C
rss
⎯
626
⎯
Gate Resistance
R
G
⎯
23.1
⎯
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
⎯
23.7
⎯
nC
V
DS
= -6V, I
D
= -8.9A
Total Gate Charge (V
GS
= -8V)
Q
g
⎯
38.8
⎯
Gate-Source Charge
Q
gs
⎯
5.3
⎯
Gate-Drain Charge
Q
gd
⎯
9.8
⎯
Turn-On Delay Time
t
D(on)
⎯
10.6
⎯
nS
V
DD
= -6V, R
L
= 6Ω
V
GS
= -4.5V, R
G
= 6Ω, I
D
= -1A
Turn-On Rise Time
t
r
⎯
25.5
⎯
Turn-Off Delay Time
t
D(off)
⎯
144
⎯
Turn-Off Fall Time
t
f
⎯
129
⎯
Body Diode Reverse Recovery Time
t
rr
—
48.9 —
nS
I
F
= -8.9A, di/dt = -100A/μs
Body Diode Reverse Recovery Charge
Q
rr
—
15.3 —
nC
I
F
= -8.9A, di/dt = -100A/μs
Notes: 6.
I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= 25°C.
7. Short duration pulse test used to minimize self-heating effect.
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 11 Typical Output Characteristics
DS
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0.0
5.0
10.0
15.0
20.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
= -1.8V
GS
V
= -2.0V
GS
V
= -3.0V
GS
V
= -4.0V
GS
V
= -8.0V
GS
V
= -4.5V
GS
V
= -2.5V
GS
V
= -3.5V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 12 Typical Transfer Characteristics
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0
2
4
6
8
10
12
14
16
18
20
0
0.5
1
1.5
2
2.5
3
3.5
4
T = 150 C
A
°
T = 125 C
A
°
T = 85 C
A
°
T = 25 C
A
°
T = -55 C
A
°
V
= -5.0V
DS