Diodes DMC1017UPD - Manual (Page 2)

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DMC1017UPD
Document number: DS36903 Rev. 1 - 0
2 of 9
www.diodes.com
April 2014
© Diodes Incorporated
DMC1017UPD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Q1 Value Q2 Value Units
Drain-Source Voltage V
DSS
12 -12 V
Gate-Source Voltage V
GSS
±8 ±8 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
9.5
7.6 -6.9
-5.5
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
13.0
10.4 -9.4
-7.5
A
Maximum Body Diode Forward Current I
S
2 -2 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
50 -35 A
Avalanche Current (Note 6) L = 0.1mH I
AS
9.7 -9.2 A
Avalanche Energy (Note 6) L = 0.1mH E
AS
4.7 4.3 mJ
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
2.3
W
T
A
= +70°C 1.5
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
54
°C/W t<10s 29
Thermal Resistance, Junction to Case (Note 5) R
θJC
4.1
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics Q1 N-Channel
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
12 ⎯ ⎯ V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1 µA V
DS
= 12V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.6 ⎯ 1.5 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS(ON)
⎯ 9.6 17
mΩ
V
GS
= 4.5V, I
D
= 11.8A
⎯ 11 25 V
GS
= 2.5V, I
D
= 9.8A
Diode Forward Voltage V
SD
⎯ 0.7 1.2 V V
GS
= 0V, I
S
= 2.9A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯ 1787 ⎯
pF
V
DS
= 6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
⎯ 297 ⎯
Reverse Transfer Capacitance C
rss
⎯ 265 ⎯
Gate Resistance R
G
⎯ 1.6 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
⎯ 18.6 ⎯
nC V
DS
= 6V, I
D
= 11.8A
Total Gate Charge (V
GS
= 10V) Q
g
⎯ 35.4 ⎯
Gate-Source Charge Q
gs
⎯ 2.7 ⎯
Gate-Drain Charge Q
gd
⎯ 3.8 ⎯
Turn-On Delay Time t
D(on)
⎯ 6.9 ⎯
nS
V
DD
= 6V, R
L
= 6Ω
V
GS
= 4.5V, R
G
= 6Ω, I
D
= 1A
Turn-On Rise Time t
r
⎯ 10.9 ⎯
Turn-Off Delay Time t
D(off)
⎯ 70.3 ⎯
Turn-Off Fall Time t
f
⎯ 31.8 ⎯
Body Diode Reverse Recovery Time t
rr
— 13.1 — nS I
F
= 11.8A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge Q
rr
— 2.2 — nC I
F
= 11.8A, di/dt = 100A/μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= 25°C.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.