Dmp32d9ufz new prod uc t new prod uc t, Dmp32d9ufz – Diodes DMP32D9UFZ User Manual
Page 4
DMP32D9UFZ
Document number: DS36842 Rev. 2 - 2
4 of 6
June 2014
© Diodes Incorporated
DMP32D9UFZ
NEW PROD
UC
T
NEW PROD
UC
T
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(T
H
)
0.4
0.5
0.6
0.7
0.8
0.9
1
-50
-25
0
25
50
75
100
125
150
-I = 1mA
D
-I = 250µA
D
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.3
0.6
0.9
1.2
1.5
T = 150 C
A
°
T = 125 C
A
°
T = -55 C
A
°
T = 25 C
A
°
T = 85 C
A
°
C
, J
UNCT
ION
CAP
A
CIT
A
N
C
E (
p
F
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
1
10
100
0
4
8
12
16
20
24
28
f = 1MHz
C
oss
C
rss
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
g
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
0
2
4
6
8
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
= -15V
I = -200mA
DS
D
t1, PULSE DURATION TIMES (sec)
Figure 11 Transient Thermal Resistance
r(t),
T
R
A
N
S
IE
NT
T
H
E
R
M
A
L
R
E
S
IS
TA
N
C
E
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
R
(t) = r(t) * R
R
= 325°C/W
Duty Cycle, D = t1/ t2
θ
θ
θ
JA
JA
JA
0.001
0.01
0.1
1
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000