Dmp32d9ufz new prod uc t new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMP32D9UFZ User Manual
Page 2: Electrical characteristics

DMP32D9UFZ
Document number: DS36842 Rev. 2 - 2
2 of 6
June 2014
© Diodes Incorporated
DMP32D9UFZ
NEW PROD
UC
T
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±10 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-200
-100
mA
Pulsed Drain Current (Note 6)
I
DM
-500 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
Steady State
P
D
390 mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
322 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30 —
— V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current @T
C
= +25°C
I
DSS
—
—
100 nA
V
DS
= -24V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±10 µA
V
GS
= ±10V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4 —
-1.0 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
—
5
Ω
V
GS
= -4.5V, I
D
= -100mA
—
—
6
V
GS
= -2.5V, I
D
= -50mA
—
—
7
V
GS
= -1.8V, I
D
= -20mA
—
—
10
V
GS
= -1.5V, I
D
= -10mA
—
6 —
V
GS
= -1.2V, I
D
= -1mA
Diode Forward Voltage
V
SD
—
-0.75 -1.0 V V
GS
= 0V, I
S
= -10mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
22.5
—
pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
2.9
—
pF
Reverse Transfer Capacitance
C
rss
—
2.1 —
pF
Total Gate Charge
Q
g
—
0.35
—
nC
V
GS
= -4.5V, V
DS
=- 15V,
I
D
= -200mA
Gate-Source Charge
Q
gs
—
0.06
—
nC
Gate-Drain Charge
Q
gd
—
0.09 —
nC
Turn-On Delay Time
t
D(on)
—
3.1
—
ns
V
DD
= -10V, V
GS
= -4.5V,
R
G
= 6Ω, I
D
= -200mA
Turn-On Rise Time
t
r
—
2.3
—
ns
Turn-Off Delay Time
t
D(off)
—
19.9 —
ns
Turn-Off Fall Time
t
f
—
10.5
—
ns
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.