Diodes DMP2540UCB9 User Manual
Page 4
DMP2540UCB9
Document number: DS35611 Rev. 4 - 2
4 of 6
June 2012
© Diodes Incorporated
DMP2540UCB9
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E(
V)
GS
(T
H
)
0
2
4
6
8
10
0.4
0.6
0.8
1.0
1.2
-V
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
10
100
1,000
0
5
10
15
20
-V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
C
oss
C
rss
f = 1MHz
C
iss
1
10
100
1,000
1
2
3
4
5
6
V
, GATE-SOURCE VOLTAGE (V)
GS
Fig. 10 Gate-Source Leakage Current vs. Voltage
I,
L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
GS
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V)
GS
0.1
1
10
100
-V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
R
Limited
DS(on)
T
= 150°C
T = 25°C
J(max)
A
V
= -8V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ