Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP2540UCB9 User Manual
Page 2
DMP2540UCB9
Document number: DS35611 Rev. 4 - 2
2 of 6
June 2012
© Diodes Incorporated
DMP2540UCB9
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-25 V
Gate-Source Voltage
V
GSS
-6 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= 25 C
T
A
= 70 C
I
D
-4.0
-3.0
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= 25 C
T
A
= 70 C
I
D
-5.2
-4.0
A
Pulsed Drain Current (Pulse duration 10
μs, duty cycle ≤1%)
I
DM
-30 A
Continuous Source Pin Current (Note 6)
I
S
-2.0 A
Pulsed Source Pin Current (Pulse duration 10
μs, duty cycle ≤1%)
I
SM
-15 A
Continuous Gate Clamp Current (Note 5)
I
G
-0.6 A
Pulsed Gate Clamp Current (Pulse duration 10
μs, duty cycle ≤1%)
I
GM
-8 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
1.0 W
Total Power Dissipation (Note 6)
P
D
1.8 W
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
126.8 °C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
θJA
69 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-25 - - V
V
GS
= 0V, I
D
= -250
μA
Zero Gate Voltage Drain Current @T
C
= 25°C
I
DSS
- - -1
μA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- -
-100
nA
V
GS
= -6V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4 -0.6 -1.1 V V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance
R
DS (ON)
-
33 40
m
Ω
V
GS
= -4.5V, I
D
= - 2A
42 50
V
GS
= -2.5V, I
D
= -2A
52 60
V
GS
= -1.8V, I
D
= -2A
Forward Transfer Admittance
|Y
fs
|
- 12 - S
V
DS
= -10V, I
D
= -2A
Diode Forward Voltage (Note 5)
V
SD
- -0.7 -1 V
V
GS
= 0V, I
S
= -2A
Reverse Recovery Charge
Q
rr
-
100
- nC
V
dd
= –9.5V, I
F
= –2A, di/dt =
200A/
μs
Reverse Recovery Time
t
rr
-
130
- ns
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 342
450 pF
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 174
225 pF
Reverse Transfer Capacitance
C
rss
- 70 90 pF
Series Gate Resistance
R
G
28
35
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (4.5V)
Q
g
- 4.8
6.0 nC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -2A
Gate-Source Charge
Q
gs
- 0.5 - nC
Gate-Drain Charge
Q
gd
- 1.0 - nC
Turn-On Delay Time
t
D(on)
- 11 - ns
V
DD
= -10V, V
GS
= -4.5V,
I
DS
= -2A, R
G
= 2
Ω,
Turn-On Rise Time
t
r
- 12 - ns
Turn-Off Delay Time
t
D(off)
- 56 - ns
Turn-Off Fall Time
t
f
- 42 - ns
Notes: 5.
Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch
2
(6.45-cm
2
), 2-oz. (0.071-mm thick) Cu
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.