Diodes DMP1096UCB4 User Manual
Page 4
DMP1096UCB4
Document number: DS31954 Rev. 7 - 2
4 of 6
December 2012
© Diodes Incorporated
DMP1096UCB4
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
-V
, G
A
T
E
THRES
H
O
L
D
VO
L
T
AG
E (
V
)
GS
(T
H
)
I = -1mA
D
I = -250µA
D
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig. 8 Diode Forward Voltage vs. Current
-V
, SOURCE-DRAIN VOLTAGE (V)
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
10
100
1,000
10,000
0
2
4
6
8
10
12
Fig. 9 Typical Total Capacitance
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
0.01
0.1
1
10
100
1,000
0
2
4
6
8
10
12
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
-I
, L
EAKA
G
E
C
U
R
R
E
N
T
(n
A
)
DS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.00001
0.001
0.01
0.1
1
10
100
1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001
0.001
0.01
0.1
1
r(t
),
T
R
AN
SI
EN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
T - T = P * R
(t)
Duty Cycle, D = t /t
J
A
JA
1 2
θ
R
(t) = r(t) *
θJA
R
R
= 150°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5