Diodes DMP1096UCB4 - Manual (Page 2)

DMP1096UCB4
Document number: DS31954 Rev. 7 - 2
2 of 6
www.diodes.com
December 2012
© Diodes Incorporated
DMP1096UCB4
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-12 V
Gate-Source Voltage V
GSS
-5 V
Continuous Drain Current (Note 5) V GS = -4.5V
Steady
State
T
A
= +25°C
T A = +70°C
I D
-2.6
-2.1
A
Continuous Drain Current (Note 5) V
GS
= -2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-2.4
-1.9
A
Pulsed Drain Current (Note 6) I
DM
-10 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
0.82 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R θJA 150 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-12 - - V V
GS
= 0V, I
D
= -250 μA
Gate-Source Breakdown Voltage BV
GSS
-6.0 - - V V
DS
= 0V, I
G
= -250 μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
- - -1 μA
V
DS
= -9.6V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - -500 nA V
GS
= -5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4 -0.6 -1.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
- 85 102
mΩ
V
GS
= -4.5V, I
D
= -500mA
- 97 116 V
GS
= -2.5V, I
D
= -500mA
- 127 152 V
GS
= -1.5V, I
D
= -500mA
Forward Transfer Admittance |Y
fs
| - 4 - S V
DS
= -6V, I
D
= -500mA
Diode Forward Voltage V SD
-0.6 -1.0 V V GS = 0V, I S = -500mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 251 -
pF
V DS = -6V, V GS = 0V,
f = 1.0MHz
Output Capacitance C
oss
- 359 -
Reverse Transfer Capacitance C
rss
- 70 -
Total Gate Charge Q
g
- 3.7 -
nC
V
GS
= -4.5V, V
DS
= -6V,
I
D
= -500mA
Gate-Source Charge Q
gs
- 0.4 -
Gate-Drain Charge Q
gd
- 0.6 -
Gate Charge at Vth Q
g(th)
- 0.2 -
Turn-On Delay Time t D(on)
- 17.6 -
ns
V
DS
= -6V, V
GS
= -2.5V,
R G = 20 Ω, I
D = -500mA
Turn-On Rise Time t
r
- 26.9 -
Turn-Off Delay Time t
D(off)
- 37.5 -
Turn-Off Fall Time t
f
- 32.3 -
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.