Diodes DMP1055UFDB - Manual (Page 4)

DMP1055UFDB
Document number: DS36934 Rev.1 - 2
4 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMP1055UFDB
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(T
H
)
0
0.2
0.4
0.6
0.8
1
-50 -25 0 25 50 75 100 125 150
-I = 1mA
D
-I = 250µA
D
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = -55°C
A
T = 25°C
A
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
pF
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
10
100
1000
10000
0 2 4 6 8 10 12
f = 1MHz
C
oss
C
rss
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
g
-V
, G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
0 5 10 15 20 25
V = -10V
I = -4.7A
DS
D
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA Safe Operation Area
DS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
0.01
0.1
1
10
100
0.1 1 10 100
T = 150°C
T = 25°C
V
= -4.5V
Single Pulse
J(max)
A
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W