Diodes DMP1055UFDB - Manual (Page 2)

DMP1055UFDB
Document number: DS36934 Rev.1 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMP1055UFDB
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-12 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.9
-3.1
A
t < 5s
T
A
= +25°C
T
A
= +70°C
I
D
-5.0
-4.0
A
Maximum Continuous Body Diode Forward Current (Note 5) I
S
-1.7 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
-25 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Steady State
P
D
1.36
W
t < 5s 1.89
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
92
°C/W t < 5s 66
Thermal Resistance, Junction to Case (Note 5) R
θJC
18
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-12 — — V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — -1.0 μA V
DS
= -12V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 μA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.4 — -1 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
— 37 59
mΩ
V
GS
= -4.5V, I
D
= -3.6A
— 48 81 V
GS
= -2.5V, I
D
= -3.1A
— 69 115 V
GS
= -1.8V, I
D
= -2.6A
— 88 215 V
GS
= -1.5V, I
D
= -0.5A
Diode Forward Voltage V
SD
— -0.7 -1.2 V V
GS
= 0V, I
S
= -3.7A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 1028 — pF
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 285 — pF
Reverse Transfer Capacitance C
rss
— 254 — pF
Gate Resistance R
g
— 19.6 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
— 13 — nC
V
DS
= -10V, I
D
= -4.7A
Total Gate Charge (V
GS
= -8V) — 20.8 — nC
Gate-Source Charge Q
gs
— 1.8 — nC
Gate-Drain Charge Q
gd
— 4.5 — nC
Turn-On Delay Time t
D(on)
— 5.6 — ns
V
DD
= -6V, V
GS
= -4.5V,
R
L
= 1.6Ω, R
G
= 1Ω
Turn-On Rise Time t
r
— 12.8 — ns
Turn-Off Delay Time t
D(off)
— 30.7 — ns
Turn-Off Fall Time t
f
— 25.4 — ns
Body Diode Reverse Recovery Time trr — 31.6 — nS I
S
= -3.6A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr — 7.8 — nC I
S
= -3.6A, dI/dt = 100A/μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.