Diodes DMN30H4D0L - Manual (Page 4)

DMN30H4D0L
Document number: DS36313 Rev. 2 - 2
4 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN30H4D0L
NEW PROD
UC
T
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J

R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
TA
N
C
E (
)
DS
(O
N)

0
1
2
3
4
5
6
V = 5V
I = 200mA
GS
D
V = V
I = 300mA
GS
D
10
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J

V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
0
0.5
1
1.5
2
2.5
3
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 0.3 0.6 0.9 1.2 1.5
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = -55°C
A
T = 25°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
10
1,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (p
F
)
T
0 5 10 15 20 25 30 35 40
100
1
C
iss
f = 1MHz
C
oss
C
rss
Q (nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
0
2
4
6
8
10
0 1 2 3 4 5 6 7 8
V = 192V
I = A
DS
D
0.5
0.001
0.01
0.1
1
10
0.1 1 10 100 1000
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
J(max)
A
V = 4.5V
Single Pulse
GS
DUT on 1 * MRP Board