Diodes DMN30H4D0L - Manual

DMN30H4D0L
Document number: DS36313 Rev. 2 - 2
1 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN30H4D0L
NEW PROD
UC
T
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
300V
4Ω @ V
GS
= 10V 0.25A
4Ω @ V
GS
= 4.5V 0.25A
Description and Applications
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Description and Applications
 DC-DC Converters
 Power management functions
 Battery Operated Systems and Solid-State Relays
 Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
Features and Benefits
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Small Surface Mount Package
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
 Case: SOT23
 Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Solderable per MIL-STD-202, Method 208
 Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
 Terminal Connections: See Diagram
 Weight: 0.008 grams (approximate)
Ordering Information
(Note 4)
Part Number Case Packaging
DMN30H4D0L -7 SOT23 3,000/Tape & Reel
DMN30H4D0L -13 SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2013 2014 2015 2016 2017 2018 2019
Code A B C D E F G
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
D
G S
Top View
Pin Configuration
e3
Equivalent Circuit
D
S
G
2H = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2H 2H