Diodes DMN30H4D0L - Manual (Page 2)

DMN30H4D0L
Document number: DS36313 Rev. 2 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN30H4D0L
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
300 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
0.25
0.20
A
Pulsed Drain Current (10μs pulse, duty cycle ≦1%) I
DM
2 A
Maximum Body Diode Continuous Current (Note 6) I
S
0.8 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
0.31
W
(Note 6) 0.47
Thermal Resistance, Junction to Ambient
(Note 5)
R
JA
377
°C/W (Note 6) 255
Thermal Resistance, Junction to Case (Note 6) R
JC
81
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
300   V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
  1.0 µA V
DS
= 240V, V
GS
= 0V
Gate-Body Leakage I
GSS
  ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1  3 V V
DS
= V
GS
, I
D
= 250 µA
Static Drain-Source On-Resistance R
DS(ON)
 2.1 4
Ω
V
GS
= 10V, I
D
= 0.3A
 2.1 4 V
GS
= 4.5V, I
D
= 0.2A
 3.8  6 V
GS
= 2.7V, I
D
= 0.1A
Diode Forward Voltage V
SD
 0.7  1.2  V V
GS
= 0V, I
S
= 0.3A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
 187.3 
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
 11.7 
Reverse Transfer Capacitance C
rss
 8.7 
Total Gate Charge Q
g
 7.6 
nC
V
DS
= 192V, V
GS
= 10V,
I
D
= 0.5A
Gate-Source Charge Q
gs
 0.5 
Gate-Drain Charge Q
gd
 3.3 
Turn-On Delay Time t
D(on)
 4.9 
nS
V
DS
= 60V, R
L
=200Ω
V
GS
= 10V, R
G
= 25Ω
Turn-On Rise Time t
r
 4.7 
Turn-Off Delay Time t
D(off)
 25.8 
Turn-Off Fall Time t
f
 17.5 
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.