Diodes DMN6068SE - Manual (Page 4)

DMN6068SE
Document Number DS32033 Rev. 4 - 2
4 of 9
www.diodes.com
September 2013
© Diodes Incorporated
DMN6068SE
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
60   V I
D
= 250µA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
  0.5 µA V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0  3.0 V I
D
= 250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 12) R
DS (ON)
 
0.068
Ω
V
GS
= 10V, I
D
= 12A
0.100 V
GS
= 4.5V, I
D
= 6A
Forward Transconductance (Notes 12 & 13) g
fs
 19.7  S V
DS
= 15V, I
D
= 12A
Diode Forward Voltage (Note 12) V
SD
 0.98 1.15 V I
S
= 12A, V
GS
= 0V
Reverse recovery time (Note 13) t
rr
 145  ns
I
S
= 12A, di/dt= 100A/µs
Reverse recovery charge (Note 13) Q
rr
 929  nC
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
C
iss
 502  pF
V
DS
= 30V, V
GS
= 0V
f= 1MHz
Output Capacitance C
oss
 45.7  pF
Reverse Transfer Capacitance C
rss
 27.1  pF
Total Gate Charge (Note 14) Q
g
 5.55  nC V
GS
= 4.5V
V
DS
= 30V
I
D
= 12A
Total Gate Charge (Note 14) Q
g
 10.3  nC
V
GS
= 10V Gate-Source Charge (Note 14) Q
gs
 1.6  nC
Gate-Drain Charge(Note 14) Q
gd
 3.5  nC
Turn-On Delay Time (Note 14) t
D(on)
 3.6  ns
V
DD
= 30V, V
GS
= 10V
I
D
= 12A, R
G
 6.0Ω
Turn-On Rise Time (Note 14) t
r
 10.8  ns
Turn-Off Delay Time (Note 14) t
D(off)
 11.9  ns
Turn-Off Fall Time (Note 14) t
f
 8.7  ns
Notes: 12. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.