Maximum ratings, Thermal characteristics – Diodes DMN6068SE User Manual
Page 2
DMN6068SE
Document Number DS32033 Rev. 4 - 2
2 of 9
September 2013
© Diodes Incorporated
DMN6068SE
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Drain-Source voltage
V
DSS
60 V
Gate-Source voltage
(Note 6)
V
GS
20
V
Single Pulsed Avalanche Energy
(Note 11)
E
AS
37.5 mJ
Single Pulsed Avalanche Current
(Note 11)
I
AS
5.0 A
Continuous Drain current
V
GS
= 10V
(Note 8)
I
D
5.6
A
T
A
= +70°C (Note 8)
4.5
(Note 7)
4.1
Pulsed Drain current
V
GS
= 10V
(Note 9)
I
DM
20.8 A
Continuous Source current (Body diode)
(Note 8)
I
S
4.9 A
Pulsed Source current (Body diode)
(Note 9)
I
SM
20.8 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Power dissipation
Linear derating factor
(Note 7)
P
D
2.0
16.0
W
mW/°C
(Note 8)
3.7
29.5
Thermal Resistance, Junction to Ambient
(Note 7)
R
θJA
62.5
°C/W
(Note 8)
34
Thermal Resistance, Junction to Lead
(Note 10)
R
θJL
11.5
Operating and storage temperature range
T
J
, T
STG
-55 to +150
°C
Notes:
6. AEC-Q101 V
GS
maximum is
16V.
7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
8. Same as note (3), except the device is measured at t
10 sec.
9. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
11. UIS in production with L = 3.0mH, I
AS
= 5.0A, R
G
= 25Ω, V
DD
=50V, starting T
J
= +25°C.