Diodes DMS3016SFG - Manual (Page 5)

POWERDI is a registered trademark of Diodes Incorporated.
DMS3016SFG
Document number: DS35434 Rev. 7 - 2
5 of 7
www.diodes.com
October 2012
© Diodes Incorporated
DMS3016SFG
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE THR
ESHO
L
D
VO
L
T
AG
E
(V)
GS
(T
H
)
I = 100mA
D
0.5
1
1.5
2
-50 -25 0 25 50 75 100 125
Fig. 11 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
0
5
10
15
20
25
30
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 12 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
1,000
10,000
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
100
f = 1MHz
0 2 4 6 8 10 12 14 16
C
ISS
C
RSS
C
OSS
0 10 20 30
Fig. 13 Typical Drain-Source Leakage Current vs. Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
10,000
I
, L
EAKA
G
E
C
U
R
R
EN
T
(µ
A
)
DS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 5 10 15 20 25 30 35 40 45
Fig. 14 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
V,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E
(V
)
GS
50
V = 15V
I = 11.2A
DS
D