Diodes DMN3026LVT - Manual (Page 4)

DMN3026LVT
Document number: DS36813 Rev. 3 - 2
4 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN3026LVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVANCED INFORMATION
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J

R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
TAN
C
E (
)
DS
(O
N)

0
0.01
0.02
0.03
0.04
0.05
-50 -25 0 25 50 75 100 125 150
V = 4.5V
I = 6A
GS
D
V = V
I = 6.5A
GS
D
10
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J

V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 150°C
A
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
T = 125°C
A
T = 85°C
A
T = -55°C
A
T = 25°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
TI
O
N
C
A
P
A
C
IT
A
N
C
E (
pF)
T
10
100
1000
10000
0 5 10 15 20 25 30
f = 1MHz
C
iss
C
oss
C
rss
Q (nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
0 1 2 3 4 5 6 7 8 9 10 11 12 13
V = 15V
I = A
DS
D
4
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
R
Limited
DS(on)
0.01
0.1
1
10
100
0.1 1 10 100
T = 150°C
T = 25°C
V
= 10V
Single Pulse
J(max)
A
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ