Diodes DMN3026LVT User Manual
Product summary, Description, Applications
DMN3026LVT
Document number: DS36813 Rev. 3 - 2
1 of 6
April 2014
© Diodes Incorporated
DMN3026LVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVANCED INFORMATION
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= +25°C
30V
23mΩ @ V
GS
= 10V
6.6A
30mΩ @ V
GS
= 4.5V
5.8A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC
Converters
Power management functions
Backlighting
Features and Benefits
Low Input Capacitance
Low
On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case:
TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN3026LVT-7
TSOT26
3,000/Tape & Reel
DMN3026LVT-13
TSOT26
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2010
2011
2012
2013
2014
2015
2016
Code X Y Z A B C D
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
TSOT26
Top View
Top View
Pin Configuration
N5L = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
D
D
G
D
D
S
1
2
3
6
5
4
Equivalent Circuit
N5L
Y
M
e3
N5L
Y
M
Shanghai A/T Site
Chengdu A/T Site