Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN3026LVT User Manual
Page 2
DMN3026LVT
Document number: DS36813 Rev. 3 - 2
2 of 6
April 2014
© Diodes Incorporated
DMN3026LVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVANCED INFORMATION
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
6.6
5.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
8.5
6.8
A
Maximum Body Diode Forward Current (Note 6)
I
S
3.0 A
Pulsed Drain Current (10
s pulse, duty cycle = 1%)
I
DM
35 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.2
W
T
A
= +70°C
0.8
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
100 °C/W
t<10s 60
°C/W
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.5
W
T
A
= +70°C
1.0
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
83 °C/W
t<10s 50
°C/W
Thermal Resistance, Junction to Case (Note 6)
R
θJC
14.5 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
1.0 µA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0 1.5 2.0 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS(ON)
19 23
mΩ
V
GS
= 10V, I
D
= 6.5A
22 30
V
GS
= 4.5V, I
D
= 6.0A
Diode Forward Voltage
V
SD
0.7 1.2 V
V
GS
= 0V, I
S
= 1.0A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
643
pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
65
Reverse Transfer Capacitance
C
rss
49
Gate Resistance
R
G
2.5
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
5.7
nC
V
DS
= 15V, I
D
= 4.0A
Total Gate Charge (V
GS
= 10V)
Q
g
12.5
Gate-Source Charge
Q
gs
1.7
Gate-Drain Charge
Q
gd
1.8
Turn-On Delay Time
t
D(on)
2.2
nS
V
GS
= 10V, V
DD
= 15V, R
G
= 6.0Ω,
I
D
= 6.5A
Turn-On Rise Time
t
r
2.5
Turn-Off Delay Time
t
D(off)
12.1
Turn-Off Fall Time
t
f
3.0
Body Diode Reverse Recovery Time
t
rr
6.5
nS
I
F
= 6.5A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
rr
1.7
nC
I
F
= 6.5A, dI/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.