A product line of diodes incorporated – Diodes DMN2300UFL4 User Manual
Page 4
DMN2300UFL4
Datasheet Number: DS35946 Rev. 1 - 2
4 of 7
May 2012
© Diodes Incorporated
DMN2300UFL4
A Product Line of
Diodes Incorporated
0
0.1
0.2
0.3
0.4
0
0.4
0.8
1.2
1.6
2
Fig. 5 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R
, DRA
IN-
S
OU
RCE
ON-
RES
IST
A
NCE
(
)
DS
(O
N)
Ω
V
= 4.5V
GS
V
= 2.5V
GS
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
I , DRAIN CURRENT (A)
D
Fig. 6 Typical On-Resistance
vs. Drain Current and Temperature
0
0.2
0.4
0.6
0.8
R
,
D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
T
AN
C
E (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 4.5V
GS
Fig. 7 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AI
N
-S
O
U
R
C
E
ON-
R
ESIS
T
A
NCE (
N
O
R
M
A
L
IZ
E
D)
DS
O
N
V
= 4.5V
I = 1.0A
GS
D
V
= 2.5V
I = 500mA
GS
D
Fig. 8 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ESI
S
T
AN
C
E (
)
DS
O
N
Ω
V
= 4.5V
I = 1.0A
GS
D
V
= 2.5V
I = 500mA
GS
D
Fig. 9 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.2
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 10 Diode Forward Voltage vs. Current
V
, SOURCE-DRAIN VOLTAGE (V)
SD
0
0.4
0.8
1.2
1.6
2.0
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A