Diodes DMN2300UFL4 - Manual (Page 3)

DMN2300UFL4
Datasheet Number: DS35946 Rev. 1 - 2
3 of 7
www.diodes.com
May 2012
© Diodes Incorporated
DMN2300UFL4
A Product Line of
Diodes Incorporated
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 10 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1 μA V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - 10 μA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V GS(th)
0.45 - 0.95 V V DS = V GS , I D = 250 μA
Static Drain-Source On-Resistance R
DS (ON)
- - 195
m
Ω
V
GS
= 4.5V, I
D
= 300mA
- - 260 V
GS
= 2.5V, I
D
= 250mA
- -
380 V GS = 1.8V, I D = 100mA
520 V
GS
= 1.5V, I
D
= 50mA
Forward Transfer Admittance |Y
fs
| 40 - - mS V
DS
= 3V, I
D
= 30mA
Diode Forward Voltage V
SD
- 0.7 1.2 V V
GS
= 0V, I
S
= 300mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
- 64.3 - pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 6.1 - pF
Reverse Transfer Capacitance C
rss
- 4.5 - pF
Gate Resistance R
g
- 70 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
- 1.6 - nC
V GS = 4.5V, V DS = 15V,
I
D
= 1A
Gate-Source Charge Q gs
- 0.2 - nC
Gate-Drain Charge Q
gd
- 0.2 - nC
Turn-On Delay Time t
D(on)
- 3.5 - ns
V DS = 10V, I D = 1A
V
GS
= 10V, R
G
= 6Ω
Turn-On Rise Time t r
- 2.8 - ns
Turn-Off Delay Time t
D(off)
- 38 - ns
Turn-Off Fall Time t
f
- 13 - ns
Notes: 8. Short duration pulse test used to minimize self-heating effect.
0 1 2 3 4 5
Fig. 3 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
0.5
1.0
1.5
2.0
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V = 1.2V
GS
V = 1.5V
GS
V = 1.8V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 4.5V
GS
0
0.5
1.0
1.5
2.0
0 0.5 1 1.5 2 2.5 3
Fig. 4 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A T = 125°C
A
T = 150°C
A
V = 5V
DS