Diodes DMN2027USS - Manual (Page 6)

DMN2027USS
Document number: DS35038 Rev. 1 - 2
6 of 8
www.diodes.com
October 2010
© Diodes Incorporated
DMN2027USS
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
10
100
1,000
10,000
f = 1MHz
0 5 10 15 20
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
C
iss
C
rss
C
oss
0 5 10 15 20
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
I
, L
EAKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
2
4
6
8
10
0 5 10 15 20 25 30
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V
,
GA
T
E
-S
OURCE
VOL
T
AGE
(
V
)
GS
V = 15V
I = 9.4A
DS
D